Semiconductor laser
A semiconductor laser device is designed to emit a laser beam by electron transition in a compound semiconductor having p-n junctions. In semiconductor lasers, electromagnetic waves are amplified in a semiconductor superlattice structure. Semiconductor lasers may be diode lasers (bipolar) or non-diode lasers such as quantum cascade (QC) lasers (unipolar). Semiconductor lasers are used for a variety of applications and can be built with different structures and semiconductor materials, such as gallium arsenide (GaAs). A semiconductor laser typically comprises an active region sandwiched between two mirrors, one of which is serves as the exit mirror. The area between the reflective planes is often referred to as the resonator. When the active region is pumped with an appropriate pumping energy, it produces photons, some of which resonate and build up to form coherent light in the resonant cavity formed by the two mirrors. A portion of the coherent light built up in the resonating cavity formed by the active region and top and bottom mirrors passes through the exit mirror as the output laser beam. Vertical cavity surface emitting lasers (VCSELs) represent a class of semiconductor lasers in which optical emission occurs normal to the plane of a PN junction. VCSELs typically have active regions, distributed Bragg reflector (DBR) mirrors, current confinement structures, substrates, and contacts. VCSELs have certain advantages over edge-emitting laser diodes, including smaller optical beam divergence and better-defined and more circular laser beams. Vertical cavity surface emitting lasers have become the dominant light source for optical transmitters used in short-reach local area networks and storage area network applications, in which a multi-mode optical fiber is used for data transmission.
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