Field effect transistor (FET)
Semiconductor circuits continue to strive to reduce the size of individual electronic components, thereby enabling smaller and denser integrated circuitry. One typical circuitry device is a field effect transistor (FET). A field effect transistor (FET) is a device in which an output current is controlled by manipulating a voltage applied to a gate electrode. Field effect transistors have been known for a number of years and are now the transistor of choice for use in integrated digital circuits. Transistors, including FETs, form the building blocks of many active electronic circuits. Like bipolar transistors, field effect transistors are widely used as important switches or amplifying elements. A field effect transistor has a structure wherein a semiconductor material is provided with a source electrode and a drain electrode, and via an insulation layer, a gate electrode. A junction field-effect transistor (JFET) has a pn junction provided on either side of a channel region where carriers are passed therethrough, and a reverse bias voltage is applied from a gate electrode to extend a depletion layer from the pn junction into the channel region to control the conductance of the channel region and carry out such an operation as switching. Junction field effect transistors (JFETs) are majority carrier devices that conduct current through a channel that is controlled by the application of a voltage to a p-n junction. JFETs may be constructed as p-channel or n-channel and may be operated as enhancement mode devices or depletion mode devices.
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