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Bipolar junction transistor (BJT)

Bipolar junction transistor (BJT) is a transistor device using electrons and holes carrier to transport currents. A bipolar junction transistor (BJT) utilizes two type of carriers, "electrons" and "hot holes", to transmit current. Bipolar junction transistor has three electrodes, emitter, base and collector. Typically, the emitter has a higher dopant concentration than the base and the collector, and the base has a higher dopant concentration than the collector. The function of the bipolar Junction transistor is to enlarge a input current signal, and therefore the bipolar junction transistor can be transferring current amplifier of voltage signal. The BJT can be operated as an amplifier or as a switch. In operation, the emitter/base pn junction is forward biased and the collector/base pn junction is reverse biased. In general, there are two types of bipolar junction transistors: a lateral bipolar junction transistor and a vertical bipolar junction transistor. Bipolar junction transistors are an integral component in modem microelectronics. Bipolar junction transistors feature improved performance, in terms of switching speeds or device frequency, (Ft), compared to metal oxide semiconductor field effect transistors (MOSFET). Bipolar junction transistors with higher current driving capacity and faster operating speed have been increasingly replacing MOS field effect transistors in specific parts of individual products in recent years.

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