Semiconductor integrated circuits chips are constructed as dies on wafers. Layers of various materials, which are semiconducting, conducting or insulating, are utilized to form the integrated circuits. These materials are doped, deposited and etched using various well-known processes. The wafer is also processed resulting in a structure including a large number of individual semiconductor dice or chips. In the semiconductor industry it is common to form a layer of crystalline silicon (an active layer) on an insulating layer to reduce any effects or interactions between the substrate (handle wafer) on one side of the insulating layer and components formed on or in the crystalline layer on the other side of the insulating layer. A typical wafer material is crystalline silicon. Active electronic integrated circuits for microelectronic devices are typically fabricated by creating a large number of circuits in an array on a silicon wafer. The silicon wafer is typically a thin disk of silicon which undergoes a variety of processes to produce the active circuits in the silicon wafer. A silicon wafer to fabricate electronic devices such as a semiconductor and the like is provided by thinly slicing a single crystalline silicon ingot. A variety of methods may be used to separate individual circuits on a silicon wafer. A well-known method of producing a single crystalline ingot for a wafer used for electronic devices such as semiconductor devices is that of Czochralski (Cz) process. Czochralski silicon wafers, CZ wafers, are preferred for VLSI applications since they can withstand high thermal stresses and are able to offer an internal gettering mechanism that can remove unwanted impurities from the device structures on a wafer surface.
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