MOSFET
The metal oxide semiconductor field-effect transistors (MOSFET) refer to various field-effect transistor structures, each including a wafer of semiconductor material, a drain region and a source region integrated in the wafer, and a gate structure including a layer of conductive material separated from the wafer by a layer of insulating material. Metal oxide semiconductor field effect transistor (MOSFET) is used in many electronic products. These advantages of such field effect transistor include lower temperature formation of the metal-semiconductor barrier, low resistance along the channel width and good heat dissipation for power devices. Power MOSFETs are widely used and can be found in many electronic devices and apparatus. Well-known applications of power MOSFETs include, for example, power management and DC/DC conversion for desktop and laptop computers, portable devices and automotive electronics. Power MOSFETs are typically used as switching devices in such applications for controlling power delivery from the power source to the load. As the integration level of integrated circuits increases, the semiconductor devices are getting smaller and smaller. MOSFETs become the widely used devices in the integrated circuits because of their low power consumption and suitability for high-density integrated circuits. Integrated circuits incorporating high voltage lateral elements include both metal-oxide-semiconductor field-effect transistors (MOSFETs) devices and bipolar junction transistors. A common use of a power MOSFET in an integrated circuit is as an electronic switch. A trench MOSFET (metal-oxide-semiconductor field-effect transistor) is a transistor in which the channel is formed vertically and the gate is formed in a trench extending between the source and drain. The trench allows less constricted current flow and thereby provides lower values of specific on-resistance. In such trench MOSFET devices, the channels are arranged in a vertical manner, instead of horizontally as in most planar configurations. Such transistors provide high current per unit area where low forward voltage drops are required.
There's no product listing here. Be the first to
submit your product information.
Related products