IGBT
High voltage, high current semiconductor switching devices are known. One such device is the insulated gate bipolar transistor (IGBT). The IGBT is a power semiconductor device having both a high speed switching property of a power MOSFET and a high output property of a bipolar transistor. An insulated gate bipolar transistor has high input impedance of a field effect transistor and a high current drive capability of a bipolar transistor. IGBTs usually employ a large number of spaced cells, which may be rectangular or hexagonal cells, or may be parallel stripes in planar or trench topology. Solid state insulated gate bipolar transistor (IGBT) switches capable of handling large current loads have recently become available, enabling a number of applications for pulse width modulation control which previously were impractical. IGBTs have been used in a variety of power, control, and electronic applications, such as, in motor controllers, in motor drives, and in appliance control. IGBTs are particularly suited for such applications because of their low on-state voltage drop and high switching speed. Various structures for IGBTs, such as, planar IGBTs, trench IGBTs, and lateral IGBTs, have been designed to customize the operational properties of the device for particular applications. Lateral IGBTs are often employed in lower power control and detection circuits. Lateral IGBTs do not utilize the vertical structure of the planar and trench IGBT. Instead, lateral IGBTs generally include a substrate contact at a bottom side, a collector at one side of a top side, an emitter at the other side of the top side, and a gate disposed between the emitter and the collector at the top side.
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