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Schottky diode

Schottky diodes (Schottky barrier diodes) are well known semiconductor devices which have a metal-semiconductor transition as their basic structure and whose basic electronic properties are defined by this transition. A Schottky diode is formed from a metal-semiconductor combination which is chosen such that a depletion zone arises at the boundary surface. It is fabricated by placing metal in contact with a light-to-moderately doped n-type semiconductor material. The resulting metal-semiconductor junction operates like a diode, conducting current in one direction (from the metal anode to the semiconductor cathode) and functioning as an open-circuit in the opposite direction. Schottky barrier diode is characterized by a low forward voltage as compared to traditional p-n junction diodes. Conventional Schottky diodes conduct in forward mode whenever the anode to cathode voltage exceeds the metal to semiconductor barrier potential. The Schottky diodes have lower turn-on voltages because of the lower barrier height of the rectifying metal-to-semiconductor junction and have faster switching speeds because they are primarily majority carrier devices. Schottky diodes are desired for applications where energy losses while switching from forward bias to reverse bias and back can significantly impact the efficiency of a system and where high current conduction is desired under forward bias and little or no conduction is desired under reverse bias. Schottky diode is an important power device and used extensively as output rectifiers in switching-mode power supplies and in other high-speed power switching applications, such as motor drives, switching of communication device, industry automation and electronic automation and etc. Schottky diodes are used widely in electronic systems such as amplifiers, receivers, control and guidance systems, power and signal monitors, and as rectifiers and clamps in RF circuits. Commercial applications include radiation detectors, imaging devices, wired and wireless communications products. High frequency Schottky diodes may be GaAs devices, and frequently are discrete devices.



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