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PIN diode

PIN diodes are semiconductor diodes which comprise an intermediate area between a p-doped p-area and an n-doped n-area, which is much less doped than the p-area and the n-area and which is also referred to as an intrinsic area or i-area. A PIN diode, when forward biased, is a minority carrier device and, as such, has a long recovery time compared to majority carrier devices. In many instances a PN diode is reverse-biased under normal operation but can become temporarily forward-biased due to transients in the circuit. The PIN diode is a microwave semiconductor diode which can be used as an electrically variable resistor. It can be incorporated in waveguide, coaxial, and stripline components for microwave switching, attenuation, limiting, modulation, and phase shifting. A PIN diode attenuator is a device that provides a predetermined value of attenuation in a transmission line, in response to a precise value of bias. Mesa-type PIN diodes are used in monolithic microwave circuits, attenuators, and other electronic devices requiring excellent high frequency and switching characteristics. PIN diodes are often used as switching elements in a variety of military and commercial applications. Such applications include automotive collision avoidance systems (CAS), passive radiation imaging systems and radar applications, and switch matrix devices useful for networking applications.

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