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Thin film capacitor

Electronic circuits are becoming increasingly smaller with the development of integrated circuit techniques. Accordingly, compact electronic circuit units have been developed which have thin-film circuit elements, such as resistors, capacitors, and inductors, on an insulative substrate. Film capacitors exist for a wide capacitance range. In general, the dielectric in such film capacitors comprises a plastic film. The electrodes comprise conductive metal areas. These metal areas are either thin conductor films or conductor layers vapor-deposited onto the plastic film. Thin film capacitor devices generally have a substrate and a lower electrode, a dielectric layer, and an upper layer which are deposited on the substrate in that order. The thin-film capacitors also have a semiconductor substrate functioning as a lower electrode and have a dielectric layer and an upper layer which are deposited on the semiconductor substrate in that order in some cases. The operational characteristics of thin film capacitors become increasingly important as the operation frequency of the various circuits in which these capacitors are included increases. Examples of such circuits include dynamic random access memories, filters and multi-chip modules, in which the thin-film capacitor is employed as a decoupling capacitor. A dielectric thin film capacitor used in a semiconductor device such as DRAM or a noise filter has a structure in which a substrate, a lower electrode, a dielectric thin film, and an upper electrode are stacked in order. The dielectric thin film can be deposited by a sputtering process, a CVD process (chemical vapor deposition), a MBE process (molecular beam epitaxy), a sol-gel process, or a MOD process (metalorganic decomposition).

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