Image sensor
An image sensor is utilized to convert an optical image focused on the sensor into electrical signals. The image sensor can be broadly categorized into a charge coupled device (CCD) and a complementary metal oxide semiconductor (CMOS) image sensor. These image sensors are based on a two dimensional array of pixels. Each pixel includes a sensing element that is capable of converting a portion of an optical image into an electronic signal. These electronic signals can then be utilized to regenerate the optical image on a display. In a charge coupled device (CCD), a plurality of metal oxide silicon (MOS) capacitors is placed in close proximity, and charge carriers are stored in or transferred between capacitors. The most popular electronic image sensors utilize arrays of CCD detectors for converting light into electrical signals. CCDs are often employed for image acquisition, particularly for small size imaging applications. CCDs are also capable of large formats with small pixel size and they employ low noise charge domain processing techniques. However, the charge coupled device (CCD) has disadvantages of a complicated driving method, high power consumption, and a complicated fabrication process requiring a multi-phased photo process. CMOS image sensors are devices using as many MOS transistors as the number of pixels to detect output sequentially, and are based on CMOS technology that uses peripheral circuits such as control circuits and signal processing circuits. As compared with the CCD image sensor, the CMOS image sensor may be easily driven with various scanning schemes and integrated with a signal processing circuit on one-chip. Therefore, the CMOS image sensor may be miniaturize in size and, consequently, a reduction in the fabricating cost and the power consumption may be realized using a compatible CMOS technology.
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