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Static random access memory (SRAM)

Random access memory (RAM) is a type of volatile memory which has many applications in information technology products. In general, random access memory can be classified into static random access memory (SRAM) and dynamic random access memory (DRAM). A DRAM memory is comprised of DRAM cells which essentially are capacitors for storing charge; the states of the capacitors constitute the memory states of the DRAM cell. Static RAM (SRAM) is a type of RAM that holds its data without external refresh as long as power is supplied to the SRAM device. SRAM is typically arranged as a matrix of memory cells fabricated in an integrated circuit chip, and address decoding in the chip allows access to each cell for read/write functions. SRAM cells have a static latching structure consisting of six transistors or a combination of four transistors and two resistors. The data can be stored indefinitely if supplied with power. A static memory cell is characterized by operation in one of two mutually-exclusive and self-maintaining operating states. Each operating state defines one of the two possible binary bit values, zero or one. A static memory cell typically has an output which reflects the operating state of the memory cell. Static random access memories (SRAMs) are generally used in applications requiring high speed, such as memory in a data processing system.


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